Precise determination of optical band gap in Cr-doped semiconductor nanowires

Hard gap in epitaxial semiconductor-superconductor nanowires.

Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunnelling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on the proximity effect in semiconductor nanowi...

Surface Optical Mode in Semiconductor Nanowires

Direct Band Gap Wurtzite Gallium Phosphide Nanowires

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexago...

Optical control of internal electric fields in band gap-graded InGaN nanowires.

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative diff...

Energy Gap Demeanor for Carbon Doped with Chrome Nanoparticle to Increase Solar Energy Absorption

Novel method doped carbon with nanoparticle Cr2O3 and thin film has been studied in much thought in wavelength range, the doping can help new excellent physical and chemical properties for carbon, this application has a semiconductor feature. Nanocomposite thin film deposited on copper and glass substrates have been created by utilizing Spray Pyrolysis method. The prec...